Power Management Guide دیتاشیت

Power Management Guide

مشخصات دیتاشیت

نام دیتاشیت Power Management Guide
حجم فایل 6420.273 کیلوبایت
نوع فایل pdf
تعداد صفحات 93

مشاهده دیتاشیت Power Management Guide

دانلود دیتاشیت

سایر مستندات

CSD17313Q2 13 pages

CSD17313Q2 13 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD17313Q2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.3W
  • Total Gate Charge (Qg@Vgs): 2.7nC@4.5V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 340pF@15V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@4A,8V
  • Package: WSON-6
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 2.3W (Ta)
  • Drain to Source Voltage (Vdss): 30V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
  • Vgs (Max): +10V, -8V
  • FET Type: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • Packaging: Cut Tape (CT)
  • Package / Case: 6-WDFN Exposed Pad
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Supplier Device Package: 6-WSON (2x2)
  • Mounting Type: Surface Mount
  • Base Part Number: CSD173
  • detail: N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WSON (2x2)